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Intensity distribution of the eight-beam case of the Si-888 reflection in backscattering geometry


Author(s): Stefan Haubold | Klaus D. Liss | Rainer Hock | Andreas Magerl | Maren Lorenzen | Michael Krisch
doi: 10.1524/zkri.219.2.81.26319
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  Zeitschrift für Kristallographie
 
Print ISSN: 0044-2968
Volume: 219 | Issue: 2
Cover date: February 2004
Page(s): 81-87
 
 
  Abstract

The eight-beam case of the Si-888 reflection in backscattering has been studied by scanning the eight simultaneously excited reflections Si 888, Si 088, Si 880, Si 808, Si 800, Si 080, Si 008 and Si 000 in wavelength and two independent rocking angles. Largely different widths of the individual reflection profiles found are explained from the Ewald representation as suggested by kinematic diffraction theory. The intensity profiles demonstrate a coupling of the eight simultaneously excited wave fields as expected from dynamic diffraction theory.